| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The UTV200 from Microsemi Corporation is a bipolar junction transistor (BJT) specifically designed for RF applications. This NPN transistor features a maximum operating voltage of 28V and can handle a current of 4.5A, with a power dissipation capability of 80W.
Operating across a frequency range of 470MHz to 860MHz, the UTV200 offers a gain between 8.5dB and 9.5dB. Its DC current gain (hFE) is a minimum of 10 at 1A and 5V. The transistor is rated for a junction temperature of up to 200°C.
Packaged in the 55JV case style, the UTV200 is designed for chassis mounting. It is listed with RoHS3 compliance and an MSL of 1.
This component is suitable for various RF power amplification and switching applications where high frequency and power handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.27 | $0.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
28V.
55JV chassis mount package.
Maximum junction temperature 200°C.
470MHz to 860MHz.
80W.
8.5dB to 9.5dB.
NPN.