| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ROHM Semiconductor US6X7TR is a dual NPN bipolar transistor array, also known as a BJT Array. This component is designed for surface mount applications and comes in a SOT-363T package.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 12V and a continuous collector current of 1.5A. The device offers a minimum DC current gain (hFE) of 270 at 200mA and 2V, with a maximum gain of 680. Its gain bandwidth product (fT) is 400MHz.
The transistor array operates within a temperature range of -55°C to +150°C. The package dimensions are 2mm in length, 1.7mm in width, and 0.77mm in height. The standard package quantity is 3000 units on a cut tape.
This component is suitable for various electronic circuits requiring dual NPN transistor functionality in a compact surface-mount form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The US6X7TR operates from -55°C to +150°C junction temperature.
The US6X7TR is offered in a SOT-363T surface mount package with flat leads.
The maximum collector-emitter voltage (VCEO) is 12V.
The US6X7TR has a maximum DC collector current of 1.5A.
The gain bandwidth product is 400 MHz.
The US6X7TR contains two NPN transistors (dual).
The total power dissipation is 1W at 25°C ambient.