US6U37TR The ROHM Semiconductor US6U37TR is an N-Channel MOSFET designed for surface mount applications. It offers a 30V drain-source voltage and a continuous drain current of 1.5A.
Mfr Part #:

US6U37TR

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor US6U37TR is an N-Channel MOSFET designed for surface mount applications. It offers a 30V drain-source voltage and a continuous drain current of 1.5A.
✓ Total Stock: 3,000 pcs
$ Price Range: $2.56

US6U37TR Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 11+ On Request On Request

US6U37TR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

US6U37TR Description

Short technical summary and product information.

The ROHM Semiconductor US6U37TR is a single N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 30V and a continuous drain current (Ta) of 1.5A. The MOSFET has a low on-resistance of 240mOhm at 1.5A and 4.5V gate-source voltage, with a gate threshold voltage (Vgs(th)) of 1.5V at 1mA.

 

This device operates at a maximum junction temperature of 150°C and has a maximum power dissipation of 700mW (Ta). It is constructed using MOSFET (Metal Oxide) technology and comes in a compact TUMT6 package suitable for surface mounting. The gate-source voltage (Vgs) maximum is ±12V, and the drive voltage ranges from 2.5V to 4.5V.

 

Key electrical characteristics include an input capacitance (Ciss) of 80pF at 10V and a gate charge (Qg) of 2.2nC at 4.5V. The US6U37TR is designed for applications requiring efficient switching and power control.

US6U37TR Quick Information

Product Type: MOSFET
Canonical Name: ROHM Semiconductor US6U37TR N-Channel MOSFET
Subcategory: N-Channel

US6U37TR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

US6U37TR Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

US6U37TR Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • 1.5A continuous drain current capability.
  • Low 240mOhm maximum on-resistance.
  • Surface mount TUMT6 package.
  • Operates up to 150°C junction temperature.

US6U37TR Applications

  • Suitable for power switching circuits.
  • Ideal for general purpose amplification.
  • Used in low voltage DC-DC converters.
  • Applicable in battery management systems.

US6U37TR FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the US6U37TR?

The maximum drain-source voltage is 30V.

What is the continuous drain current rating?

The continuous drain current is 1.5A at ambient temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 240mOhm at 1.5A and 4.5V gate drive.

What package does the US6U37TR come in?

It comes in a TUMT6 surface-mount package with 6-SMD flat leads.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150°C.

What is the gate threshold voltage?

The maximum gate threshold voltage is 1.5V at 1mA drain current.

What is the maximum power dissipation?

The maximum power dissipation is 700mW at ambient temperature.

Home
Account

Categories