| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ROHM Semiconductor US6T8TR is a dual PNP bipolar transistor array, suitable for various electronic applications. This component is designed for surface mount installation and comes in a 6-SMD, Flat Leads package, specifically the TUMT6 supplier device package.
Key electrical characteristics include a voltage rating of 12V and a low current rating of 100nA (ICBO). The transistor array offers a DC Current Gain (hFE) of 270 at 200mA and 2V, with a Vce Saturation of 200mV at 25mA and 500mA. It operates at a frequency of 400MHz and has a power rating of 400mW.
The operating temperature range for this device is up to 150°C (TJ). It has undergone electrostatic discharge testing, with results indicating C3 classification for Charged Device Model (CDM) and 3A/2 for Human Body Model (HBM) tests.
This component is provided in a 6-SMD, Flat Leads package, facilitating surface mounting on PCBs. Proper handling is advised due to its electrostatic sensitive nature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The US6T8TR transistor array has a voltage rating of 12V.
The current rating for the US6T8TR is 100nA (ICBO).
The minimum DC Current Gain (hFE) for the US6T8TR is 270 at 200mA and 2V.
The operating temperature for the US6T8TR is up to 150°C (TJ).
The US6T8TR is supplied in a 6-SMD, Flat Leads package, specifically the TUMT6 supplier device package.
The US6T8TR is designed for surface mounting.
The US6T8TR has a Charged Device Model (CDM) ESD test classification of C3 and IV (Condition:A), and Human Body Model (HBM) ESD test classifications of 3A and 2 (Contact mode).