| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,000 pcs
|
12000 pcs | On Request | 1 | On Request | On Request | 0946+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ROHM Semiconductor US6T4TR is a single PNP bipolar junction transistor (BJT) suitable for various electronic applications. It is designed for surface mount installation, utilizing the UMT6 package which corresponds to SOT-363.
Key electrical characteristics include a maximum collector current of 3A and a collector-emitter breakdown voltage of 12V. The transistor exhibits a minimum DC current gain (hFE) of 270 at 500mA and 2V, with a Vce saturation of 250mV at 30mA and 1.5A. Its transition frequency is rated at 280MHz, indicating suitability for moderate-frequency operations.
This component operates at a maximum power of 1W and has an operating junction temperature range up to 150°C. The RoHS status is listed as RoHS3 Compliant, and the Moisture Sensitivity Level (MSL) is 1 (Unlimited), indicating standard handling requirements.
With its surface mount package and specific electrical parameters, the US6T4TR is a versatile component for signal amplification and switching in compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
12V maximum.
It is available in a UMT6 surface-mount package (6-TSSOP, SC-88, SOT-363).
150°C.
3A.
Minimum 270 at 500mA, 2V.
280MHz typical.
1W.