US6M2TR

The ROHM Semiconductor US6M2TR is a versatile MOSFET array featuring both N-channel and P-channel configurations. It is designed for surface mount applications with a 6-SMD, Flat Leads package (TUMT6). This component boasts a drain-to-source voltage (Vdss) of 30V for the N-channel and 20V for the P-channel, with a maximum continuous current rating of 1.5A and 1A respectively. The on-resistance (Rds On) is specified at a maximum of 240mOhm at 1.5A and 4.5V Vgs. Input capacitance (Ciss) is 80pF at 10V, and gate charge (Qg) is 2.2nC at 4.5V Vgs. The gate threshold voltage (Vgs(th)) is 1.5V at 1mA. This MOSFET array operates at temperatures up to 150°C (TJ) and has a power dissipation of 1W. It is constructed using MOSFET (Metal Oxide) technology.

This component is suitable for various electronic designs requiring efficient switching and amplification. Its surface mount package facilitates automated assembly processes. The combination of N and P-channel devices in a single package offers flexibility in circuit design, potentially simplifying board layouts and reducing component count in applications such as power management, motor control, and general-purpose switching.

The US6M2TR is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating it is suitable for standard handling and assembly procedures. Its compact TUMT6 package makes it ideal for space-constrained applications.