| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,755 pcs
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1755 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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The ROHM Semiconductor US6M2GTR is a versatile dual MOSFET featuring both N-channel and P-channel configurations, suitable for 2.5V drive applications. This component offers drain-source breakdown voltages of 30V for N-channel and 20V for P-channel, with continuous drain currents of 1.5A and 1A respectively. The on-resistance is rated at a maximum of 240mOhm at 1.5A, 4.5V for the N-channel and 390mOhm at 1A, 4.5V for the P-channel.
Designed for surface mounting, the US6M2GTR comes in a compact 6-pin TUMT-6 package. It operates at a maximum temperature of 150°C and has a power dissipation of 1W. Key electrical characteristics include gate-source threshold voltages of 1.5V and 2V, and input capacitance values of 80pF and 150pF. The MOSFET also specifies gate charge values and switching times such as rise and fall times, contributing to its performance in various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
N-Channel 30V, P-Channel 20V.
TUMT-6 surface mount package.
150°C.
N-Channel 1.5A, P-Channel 1A.
1W.
240mOhm at 1.5A, 4.5V.
N-Channel 1.5V maximum, P-Channel 2V maximum at 1mA.