| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,100 pcs
|
1100 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor US6K1TR is a dual N-channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage of 30V and can handle a continuous current of 1.5A. The MOSFET has a low on-resistance of 240mOhm at 1.5A and 4.5V gate-source voltage, making it efficient for power switching.
This component utilizes MOSFET technology with a logic level gate, suitable for low-voltage control applications. It operates within a temperature range of -55°C to 150°C (TJ). The device is packaged in a compact TUMT6 (6-SMD, Flat Leads) surface-mount configuration, ideal for space-constrained designs.
Key electrical characteristics include a gate charge of 2.2nC and an input capacitance of 80pF. The gate threshold voltage is 1.5V at 1mA. The US6K1TR is RoHS3 compliant and has a moisture sensitivity level of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
TUMT6 (6-SMD, Flat Leads).
150°C.
1.5A.
240mOhm maximum at 1.5A and 4.5V gate voltage.
2.2nC at 4.5V.
2 N-Channel (Dual).