| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,500 pcs
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7500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The PANJIT US1DT/R is a single rectifier diode with a general-purpose application. It features a maximum reverse voltage of 200V and a maximum average rectified current of 1A. The forward voltage is a maximum of 950mV at 1A, and it has a fast recovery time of 35ns.
This diode utilizes standard silicon technology and comes in a compact SOD-123F surface mount package, suitable for automated assembly and space-constrained PCB designs. The operating junction temperature ranges from -55°C to 150°C, making it suitable for a variety of environmental conditions.
Key electrical characteristics include a low reverse leakage current of 5µA at 200V and a capacitance of 14pF at 4V and 1MHz. The US1DT/R is designed for applications requiring efficient rectification and fast switching speeds.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.40 | $0.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage for the US1DT/R diode is 200V.
The US1DT/R diode has an average rectified current rating of 1A.
The maximum forward voltage of the US1DT/R diode at 1A is 950mV.
The reverse recovery time for the US1DT/R diode is 35ns.
The US1DT/R diode uses the SOD-123F package.
The operating junction temperature range for the US1DT/R diode is -55°C to 150°C.