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647 pcs
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647 pcs | On Request | 1 | On Request | On Request | 15+16+ | On Request | On Request |
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This Renesas UPD48576218F1-E24-DW1-E2-A is a high-performance DRAM memory integrated circuit with a capacity of 576Mbit. It utilizes LLDRAM2 technology and supports an HSTL memory interface, making it suitable for demanding applications.
The device operates with a clock frequency of 400 MHz and offers an access time of 20 ns. The operating voltage range is between 1.7V and 1.9V, with an operating temperature range of 0°C to 95°C (TC). The memory organization is 32M x 18.
Packaged in a 144-TFBGA (11x18.5) configuration, this component is designed for surface mounting. Its volatile memory type and robust specifications make it a reliable choice for various electronic designs requiring significant data storage and fast access.
Compliance information indicates RoHS3 compliance and an MSL of 1 Unlimited, suggesting suitability for standard manufacturing processes. REACH status is listed as unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 576 Mbit.
The memory organization is 32M x 18 bits.
The clock frequency is 400 MHz.
The operating voltage range is 1.7V to 1.9V.
The operating temperature range is 0°C to 95°C (TC).
It is available in a 144-TFBGA (11x18.5 mm) package.
It uses an HSTL (High-Speed Transceiver Logic) memory interface.