| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,162 pcs
|
1162 pcs | On Request | 1 | On Request | On Request | 1132+ | On Request | On Request | |
|
22 pcs
|
22 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Renesas UPD44325362BF5-E40-FQ1 is a volatile SRAM memory integrated circuit. It features a synchronous, QDR II technology with a memory size of 36Mbit and an organization of 1M x 36. The parallel interface operates at a clock frequency of 250 MHz, with a write cycle time of 4ns.
The device requires a supply voltage ranging from 1.7V to 1.9V and operates within a temperature range of 0°C to 70°C (TA). It is designed for surface mounting and comes in a 165-FBGA package, specifically a 165-FBGA (15x17) supplier device package.
This part is classified as obsolete. It is RoHS3 compliant, has an MSL of 1 Unlimited, and REACH unaffected status. The ECCN is 3A991B2A and HTSUS is 8542.32.0041.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 36 Mbit.
The memory organization is 1M x 36.
The clock frequency is 250 MHz.
The operating voltage range is 1.7V to 1.9V.
The operating temperature range is 0°C to 70°C.
It comes in a 165-FBGA (15x17) package.
The write cycle time is 4 ns.