| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
116 pcs
|
116 pcs | On Request | 1 | On Request | On Request | 1037+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Access Time | |
| Memory Type | |
| Mounting Type | |
| Operating Mode | |
| SVHC Present | |
| Technology |
This QDR SRAM from Renesas, part number UPD44165182BF5-E33-EQ3, offers a memory organization of 1M x 18 bits. It features a fast maximum access time of 0.45 ns, making it suitable for high-speed applications.
The device operates within a supply voltage range of 1.7V to 1.9V, with a nominal voltage of 1.8V. It utilizes CMOS technology and is designed for synchronous operation.
The UPD44165182BF5-E33-EQ3 comes in a PBGA165 package, measuring 13 x 15 mm. It is a surface-mount component with ball terminals positioned at the bottom and a terminal pitch of 1 mm. The operating temperature range for this commercial-grade component is 0°C to 70°C.
This component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum access time is 0.45 ns.
The memory organization is 1M x 18 bits.
The supply voltage ranges from 1.7V to 1.9V, with a nominal value of 1.8V.
The operating temperature range is 0°C to 70°C.
It uses a PBGA165 package.
Yes, it is RoHS3 compliant.
The Moisture Sensitivity Level is 1.