BAT54JFILM-HQ
STMicroelectronics
The STMicroelectronics BAT54JFILM-HQ is a Schottky diode array designed for surface mount applications. It offers a 40V reverse voltage and 200mA average rectified current per diode.
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2,745 pcs
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2745 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The UPA808T-T1 from NEC is a single NPN bipolar junction transistor (BJT) designed for RF small signal applications, particularly as an amplifier. It is housed in a compact SOT-363 surface-mount package.
Key electrical characteristics include a maximum collector current of 0.03 A, a maximum collector-emitter voltage of 3 V, and a minimum DC current gain (hFE) of 70. The transistor boasts a nominal transition frequency (fT) of 11000 MHz, making it suitable for high-frequency operations within the L-band.
Thermal performance is supported by a maximum ambient power dissipation of 0.18 W and an absolute maximum power dissipation of 0.18 W. The operating temperature range extends up to 150°C. The SOT-363 package is a small outline type with 6 terminals, designed for surface mounting.
This component is classified under Transistors - Bipolar (BJT) - Single and is suitable for various amplifier circuits requiring high-frequency performance.
| Qty | Low | High |
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| 1+ | $0.33 | $0.33 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (IC) for the UPA808T-T1 is 0.03 A.
The maximum collector-emitter voltage (Vceo) for the UPA808T-T1 is 3 V.
The nominal transition frequency (fT) of the UPA808T-T1 is 11000 MHz.
The minimum DC current gain (hFE) for the UPA808T-T1 is 70.
The UPA808T-T1 can operate at a maximum temperature of 150°C.
The UPA808T-T1 is supplied in a SOT-363 package.