| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,438 pcs
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5438 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The UPA800T-T1-A from California Eastern Laboratories (CEL) is a high-frequency silicon epitaxial NPN transistor. Encapsulated in an ultra-small 6-pin SOT-363 package, this device is suitable for dual transistor or cascode operation.
Key electrical characteristics include a typical gain bandwidth product (fT) of 5.5 GHz, with a maximum of 8.0 GHz. The insertion power gain (|S21E|2) is typically 7.5 dB at 2 GHz, and it features a low noise figure (NF) of 1.9 dB typical at 2 GHz. The device supports a collector-emitter breakdown voltage (VCEO) of 10V and a maximum collector current (IC) of 35mA.
With its high fT, low voltage bias, and compact size, the UPA800T-T1-A is well-suited for pager and other hand-held wireless applications. It is designed for surface mounting and operates at junction temperatures up to 150°C.
Absolute maximum ratings include a collector-to-base voltage (VCBO) of 20V and a collector current (IC) of 35mA. Total power dissipation is rated at 110mW for a single die and 200mW for two dice.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.27 | $0.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 10V.
It is available in SOT-363 (also 6-TSSOP, SC-88) surface mount package.
The maximum junction temperature is 150°C.
At VCE=3V, IC=5mA, hFE ranges from 80 (minimum) to 200 (maximum), with typical value of 120.
The gain bandwidth product (fT) is typically 5.5 GHz, up to 8 GHz maximum.
Typical noise figure is 1.9 dB, maximum 3.2 dB at VCE=3V, IC=5mA, f=2GHz.
The insertion power gain (|S21E|²) is typically 7.5 dB, minimum 5.5 dB at VCE=3V, IC=5mA, f=2GHz.