| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,878 pcs
|
9878 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The UPA2826T1S-E2-AT is an N-Channel MOSFET manufactured by Renesas. It is designed for switching applications requiring low on-resistance and high current handling. The device has a drain-to-source voltage rating of 20V and can handle a continuous drain current of 27A at 25°C. The maximum on-resistance is 4.3mOhm at 13.5A and 8V gate drive. The gate threshold voltage is 1.5V at 1mA. The device features a maximum gate charge of 37nC at 4V and input capacitance of 3610pF at 10V. The maximum power dissipation is 20W at 25°C. The operating junction temperature is up to 150°C. The MOSFET is housed in an 8-PowerWDFN package with a supplier device package of 8-HWSON (3.3x3.3mm). It is surface mountable and suitable for compact designs. The device is RoHS compliant and has an MSL of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
8-PowerWDFN (supplier device package 8-HWSON 3.3x3.3).
150°C.
27A at 25°C.
Maximum 4.3mOhm at 13.5A and 8V.
Maximum 1.5V at 1mA.
Maximum 37nC at 4V.