| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) |
The Renesas UPA2816T1S-E2-AT is a P-Channel MOSFET with a drain-source voltage rating of 30V and a continuous drain current of 17A at 25°C. This device utilizes Metal Oxide Semiconductor technology and is housed in an 8-HWSON (3.3x3.3) surface mount package.
Key electrical characteristics include a maximum on-resistance of 15.5mOhm at 17A and 10V gate-source voltage, with a drive voltage range of 4.5V to 10V. The maximum gate charge is 33.4 nC at 10V. The component operates within a temperature range of -55°C to 150°C.
This MOSFET is suitable for various electronic applications requiring efficient switching and power control. Its surface mount package facilitates integration into compact PCB designs. The device is supplied in tape and reel packaging.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
17A at 25°C case temperature.
15.5mOhm maximum at 17A and 10V gate drive.
150°C.
8-HWSON (3.3x3.3mm).
33.4 nC maximum at 10V.
1160 pF at 10V drain-source voltage.