Mfr Part #:

UPA2815T1S-E2-AT

Mfr Name: Renesas

The Renesas UPA2815T1S-E2-AT is a P-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 21A. It features a low on-resistance of 11mOhm at 10V gate drive.

✓ Total Stock: 683 pcs

$ Price Range: $2.56

UPA2815T1S-E2-AT Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	683 pcs On Request	683 pcs	On Request	1	On Request	On Request	13+	On Request	On Request

UPA2815T1S-E2-AT Description

Short technical summary and product information.

This Renesas UPA2815T1S-E2-AT is a P-Channel MOSFET designed for surface mount applications. It offers a drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 21A at a case temperature. The MOSFET exhibits a low on-resistance (Rds On) of 11mOhm when driven at 10V gate-source voltage (Vgs) and 21A drain current.

With a gate charge (Qg) of 47nC at 10V Vgs and an input capacitance (Ciss) of 1760pF at 10V Vds, this device is suitable for various power switching applications. It operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 1.5W at ambient temperature.

The component is housed in an 8-PowerWDFN package, specifically an 8-HWSON with dimensions of 3.3x3.3mm, designed for surface mounting. The maximum gate-source voltage is ±20V. Compliance information indicates RoHS3 compliance, REACH unaffected status, and Moisture Sensitivity Level 1.

UPA2815T1S-E2-AT Quick Information

Product Type: MOSFET

Canonical Name: Renesas UPA2815T1S-E2-AT P-Channel MOSFET

Subcategory: P-Channel

UPA2815T1S-E2-AT Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

UPA2815T1S-E2-AT Estimated Pricing

Qty	Low	High
1+	$2.56	$2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

UPA2815T1S-E2-AT Features

P-Channel MOSFET with 30V drain-source voltage.
Continuous drain current of 21A.
Low 11mOhm Rds On at 10V Vgs.
Surface mount 8-HWSON package.
RoHS3 compliant.

UPA2815T1S-E2-AT Applications

Used in load switch circuits.
Ideal for battery protection applications.
Suitable for power management in portable devices.
Common in DC-DC converter designs.
Used in reverse polarity protection circuits.

UPA2815T1S-E2-AT FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage for the UPA2815T1S-E2-AT?

The maximum drain-source voltage (Vdss) is 30V.

What is the continuous drain current rating?

The continuous drain current is 21A.

What is the on-resistance of this MOSFET?

The maximum on-resistance (Rds On) is 11mOhm at 21A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the UPA2815T1S-E2-AT supplied in?

It is supplied in an 8-PowerWDFN package, also known as 8-HWSON (3.3x3.3).

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Renesas
Current	21 A (Tc)
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1760 pF @ 10 V
Mounting Type	Surface Mount
Operating Temperature	150°C (TJ)
Power Dissipation (Max)	1.5 W (Ta)
Rds On (Max) @ Id, Vgs	11 mOhm @ 21A, 10V
Supplier Device Package	8-HWSON (3.3x3.3)
Supplier Package	8-HWSON (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V