| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90,000 pcs
|
90000 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Renesas UPA2810T1L-E2-AY is a P-Channel MOSFET with a drain-to-source voltage (Vdss) of 30V. It can handle a continuous drain current (Id) of 13A at 25°C and has a maximum on-resistance (Rds On) of 12mOhm at 13A and 10V gate-source voltage.
This MOSFET features a gate threshold voltage (Vgs(th)) of 2.5V at 1mA and a gate charge (Qg) of 40nC at 10V. The input capacitance (Ciss) is 1860pF at 10V. It operates within a temperature range of -55°C to 150°C.
The device is housed in an 8-DFN3333 surface-mount package, requiring specific soldering techniques for optimal performance. Its construction utilizes MOSFET (Metal Oxide) technology, making it suitable for various power management tasks.
Compliance information indicates RoHS3 compliance and REACH unaffected status, with a Moisture Sensitivity Level (MSL) of 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 30V.
The continuous drain current (Id) is 13A.
The maximum Rds On is 12mOhm at 13A and 10V gate-source voltage.
It is supplied in an 8-DFN3333 surface-mount package.
The operating temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant.