| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
37,667 pcs
|
37667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology |
This N-Channel MOSFET from Renesas, part number UPA2792AGR-E1-AT, is suitable for power applications requiring a 30V drain-source voltage and a continuous drain current of up to 10A. It offers a low on-resistance of 12.5mOhm at 5A and 10V, with a gate charge of 42nC at 10V. The device operates at temperatures up to 150°C.
Packaged in an 8-PowerSOIC (0.173", 4.40mm Width) surface mount package, this MOSFET is designed for efficient power handling. Its technology is based on MOSFET (Metal Oxide) with a logic level gate feature. The configuration includes both N and P-Channel types, making it versatile for various circuit designs.
Key electrical characteristics include an input capacitance of 2200pF at 10V. The component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1 Unlimited. REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain to source voltage is 30V.
The maximum continuous drain current is 10A.
The maximum on-resistance is 12.5mOhm at 5A and 10V.
The maximum junction operating temperature is 150°C.
The UPA2792AGR-E1-AT comes in an 8-PowerSOIC surface mount package.
The configuration is N and P-Channel.
Yes, the FET feature is logic level gate.