| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,362 pcs
|
1362 pcs | On Request | 1 | On Request | On Request | 1504+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Renesas UPA2782GR-E1-A is an N-Channel MOSFET with a Metal Oxide semiconductor technology. It is designed for switching applications and offers a drain-to-source voltage (Vdss) of 30V.
Key electrical characteristics include a continuous drain current (Id) of 11A at 25°C, a maximum on-resistance (Rds On) of 15mOhm at 5.5A and 10V gate-source voltage, and a gate threshold voltage (Vgs(th)) of 2.5V at 1mA. The device also has a maximum gate charge (Qg) of 7.1nC at 5V and an input capacitance (Ciss) of 660pF at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 2W (Ta). It is housed in a surface mount 8-SOP package, with the case dimensions specified as 8-SOIC (0.173", 4.40mm Width).
The UPA2782GR-E1-A is specified as RoHS3 Compliant, Moisture Sensitivity Level 1, and REACH Unaffected. It is suitable for various electronic designs requiring efficient switching and power management.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum junction temperature is 150°C.
It is available in an 8-SOIC (0.173", 4.40mm Width) surface mount package, also known as 8-SOP.
The maximum on-resistance is 15 mOhm at Id = 5.5A and Vgs = 10V.
The maximum gate charge is 7.1 nC at Vgs = 5V.
The maximum input capacitance is 660 pF at Vds = 10V.
The maximum gate threshold voltage is 2.5V at Id = 1mA.