| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
773 pcs
|
773 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Package / Case | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Renesas UPA2730TP-E2 is a P-Channel MOSFET with a drain-to-source voltage of 30V. It offers a continuous drain current of 20A at 25°C ambient temperature and 42A at case temperature. The MOSFET exhibits a low on-resistance of 7mOhm at 7.5A and 10V gate-source voltage, with a gate threshold voltage of 2.5V at 1mA.
Key electrical characteristics include a maximum gate charge of 97 nC at 10V and an input capacitance of 4670 pF at 10V. The device can handle a maximum gate-source voltage of ±20V. Power dissipation is rated at 3W at ambient temperature and 40W at case temperature, with an operating temperature range up to 150°C.
This MOSFET is housed in a surface-mount 8-HSOP package, also known as 8-PowerSOIC. Its P-Channel Metal Oxide Semiconductor technology makes it suitable for various power switching applications where efficient control of current flow is required.
The drain-to-source voltage (Vdss) is 30V.
The continuous drain current is 20A at 25°C ambient temperature and 42A at case temperature.
The maximum Rds On is 7mOhm at 7.5A drain current and 10V gate-source voltage.
The operating temperature range is up to 150°C.
It is in a surface-mount 8-HSOP package, also referred to as 8-PowerSOIC.
The RoHS status is non-compliant.
The Moisture Sensitivity Level is 1 Unlimited.