| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
773 pcs
|
773 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Package / Case | |
| Power Dissipation | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Renesas UPA2730TP-E2 is a P-Channel MOSFET with a Metal Oxide semiconductor technology. It is designed to handle a drain-to-source voltage of up to 30V and can sustain a continuous drain current of 20A at 25°C (Ta) or 42A at 25°C (Tc).
Key electrical characteristics include a maximum Rds On of 7mOhm at 7.5A and 10V Vgs, a gate threshold voltage (Vgs(th)) of 2.5V at 1mA, and a maximum gate charge (Qg) of 97nC at 10V Vgs. The input capacitance (Ciss) is a maximum of 4670pF at 10V Vds. The device supports drive voltages between 4V and 10V.
With a maximum power dissipation of 3W (Ta) or 40W (Tc), this MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a surface mount 8-HSOP package, also referred to as an 8-PowerSOIC with specific dimensions.
This component is suitable for applications requiring efficient switching and power control. Its specifications make it a viable option for power management circuits where P-Channel MOSFETs are preferred.
The drain-to-source voltage (Vdss) is 30 V.
The continuous drain current (Id) is 20A at 25°C (Ta) and 42A at 25°C (Tc).
The maximum Rds On is 7mOhm at 7.5A and 10V Vgs.
The operating temperature is 150°C.
The UPA2730TP-E2 is in a surface mount 8-HSOP package, also known as an 8-PowerSOIC.