UPA2718AGR-E2-AT The Renesas UPA2718AGR-E2-AT is a P-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 13A. It features a low on-resistance of 9mOhm at 6.5A and 10V.
Mfr Part #:

UPA2718AGR-E2-AT

Available from 1 distributors
Mfr Name: Renesas
Renesas
The Renesas UPA2718AGR-E2-AT is a P-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 13A. It features a low on-resistance of 9mOhm at 6.5A and 10V.
✓ Total Stock: 2,500 pcs
$ Price Range: $2.56

UPA2718AGR-E2-AT Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request 1232+ On Request On Request

UPA2718AGR-E2-AT Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

UPA2718AGR-E2-AT Description

Short technical summary and product information.

This Renesas UPA2718AGR-E2-AT is a P-Channel MOSFET designed for surface mount applications. It offers a drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Ta) of 13A. The MOSFET exhibits a low on-resistance (Rds On) of 9mOhm when measured at 6.5A drain current and 10V gate-source voltage. Key electrical parameters include an input capacitance (Ciss) of 2810 pF at 10V and a gate charge (Qg) of 67 nC at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 1mA.

 

The component is housed in an 8-PSOP package, suitable for surface mounting. Its technology is based on MOSFET (Metal Oxide) principles. The part is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

 

This MOSFET is suitable for various power switching applications where a P-channel device is required. Its specifications make it a candidate for use in power management circuits, load switching, and battery protection circuits.

UPA2718AGR-E2-AT Quick Information

Product Type: MOSFET
Canonical Name: Renesas UPA2718AGR-E2-AT P-Channel MOSFET
Subcategory: Single

UPA2718AGR-E2-AT Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

UPA2718AGR-E2-AT Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

UPA2718AGR-E2-AT Features

  • P-Channel MOSFET with 30V drain-source voltage.
  • 13A continuous drain current capability.
  • Low 9mOhm on-resistance at 6.5A, 10V.
  • Surface mount 8-PSOP package.
  • RoHS3 compliant for environmental standards.

UPA2718AGR-E2-AT Applications

  • Ideal for power switching circuits.
  • Suitable for load switching applications.
  • Used in battery protection circuits.
  • Applicable for power management designs.

UPA2718AGR-E2-AT FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain to source voltage of the UPA2718AGR-E2-AT?

The maximum drain to source voltage (Vdss) is 30 V.

What is the continuous drain current rating?

The continuous drain current is 13 A at ambient temperature (Ta).

What is the on-resistance of this MOSFET?

The maximum on-resistance is 9 mOhm at 6.5 A drain current and 10 V gate voltage.

What is the gate charge of the UPA2718AGR-E2-AT?

The maximum gate charge is 67 nC at 10 V gate voltage.

What is the input capacitance of this device?

The maximum input capacitance is 2810 pF at 10 V drain-source voltage.

What is the gate threshold voltage?

The maximum gate threshold voltage is 2.5 V at 1 mA drain current.

What package does the UPA2718AGR-E2-AT use?

It uses an 8-SOIC (0.173", 4.40mm width) surface mount package, also designated as 8-PSOP.

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