| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
336 pcs
|
336 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Renesas UPA2709AGR-E1-AT is a switching N-Channel Power MOSFET. It features a maximum drain-source voltage (Vdss) of 30V and a continuous current rating of 13A at ambient temperature (Ta).
Key electrical characteristics include a low on-resistance (Rds On) of 10.5mOhm at 7A and 10V, an input capacitance (Ciss) of 1270pF at 10V, and a gate charge (Qg) of 11nC at 5V. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 1mA.
This MOSFET is constructed using MOSFET (Metal Oxide) technology and is housed in a surface-mount 8-SOIC package with a pitch of 1.27mm. The supplier device package is specified as 8-PSOP.
Environmental compliance includes RoHS3 compliance and a Moisture Sensitivity Level (MSL) of 1. It is also classified as Pb (Lead) Free.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30 V.
The maximum continuous drain current is 13 A at ambient temperature (Ta).
The maximum on-resistance is 10.5 mOhm at 7 A drain current and 10 V gate-source voltage.
The device is available in an 8-PSOP surface mount package (8-SOIC, 0.173" width, 4.40mm width).
The maximum gate charge is 11 nC at 5 V gate-source voltage.
The maximum input capacitance is 1270 pF at 10 V drain-source voltage.
The maximum gate threshold voltage is 2.5 V at 1 mA drain current.