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UPA2520T1H-T1-AT The Renesas UPA2520T1H-T1-AT is an N-Channel MOSFET with a 30V drain-to-source voltage and 10A continuous drain current. It features a low Rds On of 13.2mOhm at 10A, 10V.
Mfr Part #:

UPA2520T1H-T1-AT

Available from 1 distributors
Mfr Name: Renesas
Renesas
The Renesas UPA2520T1H-T1-AT is an N-Channel MOSFET with a 30V drain-to-source voltage and 10A continuous drain current. It features a low Rds On of 13.2mOhm at 10A, 10V.
✓ Total Stock: 200,889 pcs
$ Price Range: $2.56

UPA2520T1H-T1-AT Available from 1 distributor

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✓ Non-Authorised
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Romaks Technologies ✓
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200,889 pcs
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UPA2520T1H-T1-AT Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id
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UPA2520T1H-T1-AT Description

Short technical summary and product information.

This N-Channel MOSFET from Renesas, part number UPA2520T1H-T1-AT, is designed for power switching applications. It offers a drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current of 10A under typical conditions.

 

The MOSFET exhibits a maximum on-resistance (Rds On) of 13.2mOhm when tested at 10A and 10V gate-source voltage. Key electrical parameters include a gate charge (Qg) of 10.8 nC and an input capacitance (Ciss) of 1100 pF, both measured under specified conditions.

 

With a maximum power dissipation of 1W (Ta) and an operating junction temperature up to 150°C, this device is suitable for various thermal environments. The gate threshold voltage (Vgs(th)) is 2.5V at 1mA.

 

The UPA2520T1H-T1-AT is housed in an 8-VSOF package and utilizes a surface mount technology, making it convenient for automated assembly processes. Its Metal Oxide Semiconductor (MOSFET) technology ensures efficient switching performance.

UPA2520T1H-T1-AT Quick Information

Product Type: MOSFET
Canonical Name: Renesas UPA2520T1H-T1-AT N-Channel MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

UPA2520T1H-T1-AT Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

UPA2520T1H-T1-AT Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

UPA2520T1H-T1-AT Features

  • 30V drain-to-source voltage rating.
  • 10A continuous drain current capability.
  • Low 13.2mOhm maximum on-resistance.
  • Surface mount 8-VSOF package.
  • Operates up to 150°C junction temperature.

UPA2520T1H-T1-AT Applications

  • Used in battery protection circuit designs.
  • Ideal for DC motor control switching stages.
  • Suitable for power supply load switching tasks.
  • Applied in automotive sensor interface modules.
  • Utilized in portable device charging circuits.

UPA2520T1H-T1-AT FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage rating?

30V

What package type does this MOSFET use?

8-VSOF (8-SMD, Flat Lead)

What is the maximum operating junction temperature?

150°C

What is the maximum on-resistance at 10V gate drive?

13.2mΩ

How much gate charge is required to switch this device?

10.8nC at 5V gate-source voltage

What is the continuous drain current rating?

10A at ambient temperature

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