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UPA1902TE-T1-AT The Renesas UPA1902TE-T1-AT is an N-Channel MOSFET designed for surface mount applications. It offers a 30V drain-to-source voltage and a continuous drain current of 7A.
Mfr Part #:

UPA1902TE-T1-AT

Available from 1 distributors
Mfr Name: Renesas
Renesas
The Renesas UPA1902TE-T1-AT is an N-Channel MOSFET designed for surface mount applications. It offers a 30V drain-to-source voltage and a continuous drain current of 7A.
✓ Total Stock: 401,778 pcs
$ Price Range: $2.56

UPA1902TE-T1-AT Available from 1 distributor

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✓ Non-Authorised
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Romaks Technologies ✓
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401,778 pcs
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UPA1902TE-T1-AT Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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UPA1902TE-T1-AT Description

Short technical summary and product information.

This N-Channel MOSFET from Renesas, part number UPA1902TE-T1-AT, is suitable for various electronic designs requiring efficient switching. It features a maximum drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 7A at 25°C. The on-resistance (Rds On) is specified at a maximum of 22mOhm at 10A and 10V gate-source voltage, indicating low conduction losses.

 

The device utilizes MOSFET (Metal Oxide) technology and is housed in a compact SC-95 surface mount package, making it ideal for space-constrained applications. Key electrical parameters include a gate charge (Qg) of 8 nC at 5V and an input capacitance (Ciss) of 780 pF at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 1mA, and the maximum gate-source voltage (Vgs) is ±20V. It operates at temperatures up to 150°C and has a power dissipation of 200mW (Ta).

 

The UPA1902TE-T1-AT is RoHS3 compliant and has an MSL rating of 1 Unlimited.

UPA1902TE-T1-AT Quick Information

Product Type: MOSFET
Canonical Name: UPA1902TE-T1-AT N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

UPA1902TE-T1-AT Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

UPA1902TE-T1-AT Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

UPA1902TE-T1-AT Features

  • N-Channel MOSFET technology.
  • 30V drain-to-source voltage.
  • 7A continuous drain current.
  • Low 22mOhm max on-resistance.
  • Surface mount SC-95 package.

UPA1902TE-T1-AT Applications

  • Low-power DC-DC converter circuits.
  • Load switching in portable devices.
  • Power management for battery-operated systems.
  • General-purpose signal switching.

UPA1902TE-T1-AT FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the UPA1902TE-T1-AT?

The drain-to-source voltage (Vdss) is 30V.

What is the continuous drain current for this MOSFET?

The continuous drain current (Id) is 7A at 25°C.

What is the maximum on-resistance of the UPA1902TE-T1-AT?

The maximum on-resistance (Rds On) is 22mOhm at 10A and 10V.

What is the operating temperature range?

The operating temperature is 150°C.

What package type is the UPA1902TE-T1-AT?

It is supplied in an SC-95 package and is surface mountable.

Is the UPA1902TE-T1-AT RoHS compliant?

Yes, it is RoHS3 compliant.

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