UPA1857GR-9JG-E1-A

This Renesas UPA1857GR-9JG-E1-A is a dual N-channel MOSFET array designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 60V and can handle a continuous current of up to 3.8A. The MOSFET offers a low on-resistance (Rds On) of 67mOhm at 2A and 10V, with a gate threshold voltage (Vgs(th)) of 2.5V at 1mA. Its input capacitance (Ciss) is 580pF at 10V, and it has a gate charge (Qg) of 12nC at 10V. The device operates with a logic level gate.

Packaged in an 8-TSSOP, this component is suitable for surface mounting. It has a power dissipation rating of 1.7W. The technology used is MOSFET (Metal Oxide). This dual MOSFET configuration provides two N-channel transistors in a single package, offering space and cost efficiencies in circuit design.

Key electrical characteristics include a 60V breakdown voltage and a 3.8A continuous current capability. The low Rds On and logic level gate feature make it suitable for applications requiring efficient switching and low power loss. The 8-TSSOP package is standard for many surface-mount designs, facilitating integration into compact electronic systems.