| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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100,000 pcs
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100000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The Renesas UPA1770G-E1-A is a P-channel power MOSFET suitable for automotive applications. It features a maximum drain-source voltage (VDSS) of -20V and a continuous drain current (ID) of -6A at Tj. The on-resistance (RDS(ON)) is specified at a maximum of 37 mohm when Vgs is 4.5V, and 59 mohm when Vgs is 2.5V or 1.8V.
This MOSFET has a gate-source voltage (VGSS) rating of -12V and a gate-source cutoff voltage (Vgs(off)) of -1.5V. The typical gate charge (Qg) is 11nC, and the typical input capacitance (Ciss) is 1300pF. Power dissipation (Pd) is rated at 0.4W.
The component is housed in an SOP package with dimensions of 5 x 4 x 1.8mm and a pitch of 1.27mm. It is designed for surface mounting. The qualification level is Industrial.
Environmental compliance includes RoHS3 compliance and a Moisture Sensitivity Level (MSL) of 1. It is also lead-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is -20V.
The continuous drain current (Id) is -6A.
The maximum on-resistance (Rds(on)) at Vgs=4.5V is 37mohm.
It is available in an 8-lead SOP (Small Outline Package) with dimensions 5x4x1.8mm and 1.27mm pitch.
The maximum gate-source cutoff voltage (Vgs(off)) is -1.5V.
The maximum power dissipation is 0.4W.
The typical input capacitance (Ciss) is 1300pF.