| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90,400 pcs
|
90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET, part number UPA1740TP-E1-AZ from Renesas, is suitable for various electronic applications requiring efficient switching. It boasts a high drain-to-source voltage rating of 200V and can handle a continuous drain current of 7A at case temperature.
The MOSFET offers a maximum on-resistance of 440mOhm at a gate-source voltage of 10V and a drain current of 3.5A. Key electrical parameters include a gate charge of 12nC and an input capacitance of 420pF. The device operates at temperatures up to 150°C.
Packaged in an 8-PowerSOIC (8-HSOP) format, the UPA1740TP-E1-AZ is designed for surface mounting. Its technology is Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). The maximum power dissipation is rated at 1W (Ta) and 22W (Tc).
Compliance information indicates RoHS3 compliance, MSL 1 Unlimited, and REACH unaffected status, though these are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 200 V.
The continuous drain current is 7 A (Tc).
The maximum on-resistance is 440 mOhm at 3.5A and 10V.
The operating temperature is up to 150°C.
It is in an 8-PowerSOIC package.
It is a surface mount device.