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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,060 pcs
|
2060 pcs | On Request | 1 | On Request | On Request | 2011+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Applications | |
| Collector Current | |
| Collector-Base Voltage (Emitter Open) | |
| Collector-Emitter Voltage (Base Open) | |
| Current Rating (Amps) | |
| Emitter-Base Voltage (Collector Open) | |
| Forward Current Transfer Ratio | |
| Junction Temperature | |
| Limiting Element Current | |
| Limiting Element Voltage | |
| Mounting Type | |
| Output Impedance | |
| Pinchi Off Current | |
| Power Gain | |
| Storage Temperature | |
| Supplier Device Package | |
| Total Power Dissipation | |
| Transistor Type | |
| Transition Frequency | |
| Voltage |
The UP05C8GG0L from Panasonic Electronic Components is a versatile transistor array designed for specialized applications, particularly CCD output circuits. This device integrates an NPN bipolar transistor and an N-channel CCD load device within a single SSMini6-F2 package, offering a compact solution that can reduce equipment size and part count.
The NPN transistor section features a collector-emitter voltage (VCEO) of 20V and a collector current (IC) of up to 50mA. The N-channel CCD load device supports a limiting element voltage (Vmax) of 40V and a limiting element current (Imax) of 10mA. The array has a total power dissipation of 125mW at 25°C and operates within a junction temperature range of 125°C.
This surface-mount component is housed in a SOT-563 or SOT-666 package, identified by the supplier package code SSMini6-F2. Its internal connection diagram shows distinct pins for emitter, base, collector, gate, and drain, facilitating integration into complex circuit designs. The UP05C8GG0L is suitable for applications requiring the combined functionality of a general-purpose NPN transistor and a CCD load device.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the NPN transistor is 20V.
The maximum collector current (IC) for the NPN transistor is 50mA.
The limiting element voltage (Vmax) for the CCD load device is 40V.
The limiting element current (Imax) for the CCD load device is 10mA.
The total power dissipation (PT) is 125mW at 25°C.
The storage temperature range is -55°C to +125°C.
The UP05C8GG0L is supplied in a SSMini6-F2 package, which is a surface-mount type.