| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,580 pcs
|
6580 pcs | On Request | 1 | On Request | On Request | 2008+ | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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The UNR9116G0L from Panasonic Electronic Components is a Silicon PNP epitaxial planar type transistor designed for digital circuits. It offers cost reduction through equipment downsizing and part count reduction. The transistor features a built-in 4.7 kΩ resistor (R1) and is suitable for automatic insertion due to its SS-Mini type package.
Key electrical specifications include a maximum collector current of 100 mA and a collector-emitter voltage of -50V. The total power dissipation is rated at 125 mW at 25°C ambient temperature. The device operates within a junction temperature range of -55°C to +125°C and a storage temperature range of -55°C to +125°C.
The UNR9116G0L is supplied in an SSMINI3-F3 package, which corresponds to SC-89, SOT-490. It is designed for surface mounting. The transistor type is PNP - Pre-Biased, with a DC current gain (hFE) minimum of 160 at 5mA collector current and 10V collector-emitter voltage. The Vce saturation is a maximum of 250mV at 300µA base current and 10mA collector current.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (base open) is -50V minimum.
The UNR9116G0L is available in SC-89, SOT-490 package and also supplier device package SSMini3-F3.
The maximum junction temperature is 125°C, storage temperature range is -55°C to +125°C.
The maximum collector current is -100mA.
The built-in base resistor (R1) is 4.7kΩ.
The minimum hFE is 160 at 5mA, 10V.
The maximum Vce saturation is 250mV at 300µA, 10mA.