UMZ1NTR

The ROHM Semiconductor UMZ1NTR is a versatile dual bipolar transistor array, integrating both NPN and PNP transistors within a single package. This configuration is ideal for applications requiring space and cost savings, as it consolidates two independent transistor elements.

This device is designed for general-purpose small signal amplification. Key electrical characteristics include a collector-emitter voltage (VCEO) of 50V for the NPN transistor and -50V for the PNP transistor. The continuous collector current (IC) is rated at 150mA for both types. The NPN transistor offers a typical transition frequency (fT) of 180MHz at 100MHz, while the PNP transistor has a typical fT of 140MHz.

The UMZ1NTR is housed in a compact 6-TSSOP, SC-88, SOT-363 (UMT6) surface-mount package, facilitating automated assembly processes. Its independent transistor elements prevent interference, further enhancing its suitability for various electronic circuits. The maximum power dissipation is 150mW for the EMZ1/UMZ1N variants.

This dual transistor array is suitable for a wide range of applications, including general-purpose amplification stages in electronic equipment. Its integrated nature and robust specifications make it a practical choice for designs where component count and board space are critical considerations.