| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,820 pcs
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2820 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The UMZ1NT1G is a dual complementary bipolar transistor manufactured by ON Semiconductor, offering both NPN and PNP configurations in a single package. This general-purpose amplifier transistor is designed for high voltage and high current applications, with a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 200mA.
Key electrical characteristics include a minimum DC current gain (hFE) of 200 at 2mA/6V and a gain bandwidth product of 114MHz. The transistor operates within a temperature range of -55°C to 150°C. It is housed in a compact SC-88/SC70-6/SOT-363 surface-mount package, suitable for space-constrained designs.
This device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications. It is also Pb-free, halogen-free, BFR-free, and RoHS compliant, aligning with environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) for the UMZ1NT1G is 50 Vdc.
The continuous collector current (IC) for the UMZ1NT1G is 200 mAdc.
The minimum DC current gain (hFE) is 200 at 2mA collector current and 6V collector-emitter voltage.
The operating temperature range for the UMZ1NT1G is -55°C to 150°C.
The UMZ1NT1G is available in an SC-88/SC70-6/SOT-363 surface mount package.
Yes, the UMZ1NT1G is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.