| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 1224+ | On Request | On Request | |
|
2,850 pcs
|
2850 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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The UMX1N from ROHM Semiconductor is a general-purpose dual transistor, also known as a pair of independent transistors within a single package. This configuration is beneficial for reducing mounting costs and space while eliminating interference between transistor elements.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 150mA. The DC current gain (hFE) ranges from 120 to 560 under typical test conditions (VCE = 6V, IC = 1mA). The transition frequency (fT) is typically 180MHz at 100MHz.
This device is supplied in a SOT-363 surface-mount package, suitable for automated mounting processes. The compact size and dual-transistor design make it suitable for various small signal amplification applications where space and cost efficiency are important considerations.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.16 | $2.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the UMX1N is 50V.
The maximum continuous collector current (IC) for the UMX1N is 150mA.
The DC current gain (hFE) for the UMX1N ranges from 120 to 560 under test conditions of VCE = 6V and IC = 1mA.
The UMX1N is supplied in a SOT-363 surface-mount package.
The typical transition frequency (fT) of the UMX1N is 180MHz.
