UMT2NTR

The UMT2NTR from ROHM Semiconductor is a dual PNP transistor array designed for general-purpose applications. It integrates two independent transistor elements within a single package, offering benefits such as reduced mounting cost and area, and elimination of interference between elements.

Key electrical specifications include a collector-emitter voltage (VCEO) of -50V and a continuous collector current (IC) of -150mA. The device boasts a DC current gain (hFE) of 120 (min) at 1mA and 6V, and a transition frequency (fT) of 140MHz at 2mA and -12V. The collector-emitter saturation voltage (VCE(sat)) is a maximum of -500mV at 50mA collector current and 5mA base current.

This transistor array is housed in a compact 6-TSSOP, SC-88, SOT-363 package, suitable for surface mounting. The operating junction temperature ranges from -55°C to +150°C. Its independent transistor elements make it ideal for applications requiring precise signal amplification without cross-talk.

Applications include general-purpose small signal amplification where space and cost efficiency are important. The dual transistor configuration simplifies circuit design and reduces component count.