| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,900 pcs
|
2900 pcs | On Request | 1 | On Request | On Request | 0322+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The UMH3NTN is a dual NPN pre-biased transistor manufactured by ROHM Semiconductor. This component is designed for applications requiring integrated biasing resistors, simplifying circuit design. It features a voltage rating of 50V and a continuous collector current of 100mA, with a power dissipation of 150mW.
The transistor incorporates an internal resistor with a value of 4.7kΩ, and exhibits a DC current gain (hFE) of at least 100 at 1mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce) is a maximum of 300mV at 250µA base current and 5mA collector current. Its frequency response extends to 250MHz.
Packaged in the compact UMT6 (6-TSSOP, SC-88, SOT-363) surface-mount form factor, the UMH3NTN is suitable for space-constrained electronic designs. Its pre-biased configuration simplifies implementation in various digital and analog circuits where a stable transistor characteristic is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The UMH3NTN has a collector-emitter voltage rating of 50V.
The maximum collector current is 100mA.
The UMH3NTN is housed in a UMT6 surface-mount package.
The power dissipation is 150mW.
The integrated base resistor is 4.7kΩ.
The transition frequency is 250MHz.