| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,242 pcs
|
2242 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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The UMH10NTN from ROHM Semiconductor is a dual NPN pre-biased bipolar transistor. This component is designed for surface mount applications and comes in a compact UMT6 package.
Key electrical characteristics include a maximum voltage rating of 50V and a continuous current capability of 100mA. It offers a minimum DC current gain (hFE) of 80 at 10mA and 5V, with a Vce saturation of 300mV maximum at 250µA and 5mA. The transistor also has a power dissipation rating of 150mW and a frequency response up to 250MHz. A built-in resistor of 47kΩ is included.
This pre-biased transistor configuration simplifies circuit design by integrating the base resistor, making it suitable for various digital and switching applications where reduced component count is desired. Its surface mount package facilitates automated assembly processes.
Environmental compliance data indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are noted with low confidence due to unverified data.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 50V.
The package is UMT6, surface mount.
The minimum DC current gain (hFE) is 80 at 10mA collector current and 5V collector-emitter voltage.
The maximum collector current is 100mA.
The maximum power dissipation is 150mW.
The frequency transition is 250MHz.
The base resistor value is 47kΩ.