| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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208 pcs
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208 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Voltage | |
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The UMG9N is a single bipolar junction transistor (BJT) manufactured by ROHM Semiconductor. It features a maximum operating voltage of 50V and a maximum collector current of 100mA. The device is designed for switching and amplification applications where high voltage and moderate current are required. It has a power dissipation limit of 150mW per element and a junction temperature maximum of 150°C, making it suitable for thermal management in various electronic circuits.
The transistor operates with a typical input resistance of 10kΩ and a DC current gain of at least 30. It requires a minimum input voltage of 3.0V to turn on and has an ON voltage drop of approximately 100mV at 10mA collector current. The input current is limited to a maximum of 880μA, and the device's storage temperature range spans from -55°C to +150°C. Its package type and mounting details are not specified but are typically compatible with standard through-hole or surface-mount configurations.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum operating voltage is 50V.
The maximum collector current is 100mA.
The junction temperature limit is 150°C.
The power dissipation limit is 150mW per element.