| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,752 pcs
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2752 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The UMG9NTR by ROHM Semiconductor is a dual pre-biased NPN bipolar junction transistor (BJT) housed in a compact UMT5 surface-mount package. This component is suitable for various electronic applications requiring efficient switching and voltage regulation.
Key electrical characteristics include a maximum collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features a high DC current gain (hFE) of 30 minimum at 5mA and 5V, and a transition frequency of 250MHz. The integrated base resistor (R1) is 10kOhms and the emitter-base resistor (R2) is also 10kOhms, simplifying circuit design.
The UMG9NTR is designed for surface mounting, making it ideal for space-constrained PCB layouts. Its pre-biased configuration simplifies external circuitry, reducing component count and assembly time. The transistor's robust performance characteristics make it a reliable choice for power management and switching tasks within electronic systems.
This device is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating suitability for a wide range of manufacturing environments. Its small UMT5 package (equivalent to SOT-353) allows for high-density integration.
50V.
UMT5 (5-TSSOP, SC-70-5, SOT-353).
2 NPN pre-biased dual transistors.
150mW.
100mA.
250MHz.
Base resistor R1 = 10kΩ, emitter-base resistor R2 = 10kΩ.