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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current Max (Maximum @ For DTr 1(NPN) | |
| Collector Current Max (Maximum @ For DTr 2(PNP) | |
| Collector Current Max (Maximum @ Total (EMD 9 / UMD 9 N) | |
| Collector Current Max (Maximum @ Total (IMD 9 A) | |
| Input Resistance (Typical @ For DTr 1(NPN) | |
| Input Resistance (Typical @ For DTr 2(PNP) | |
| Transition Frequency (Typical @ VCE = -10 V, IE = 5 mA, f = 100 MHz (For DTr 2(PNP) | |
| Transition Frequency (Typical @ VCE = 10 V, IE = -5 mA, f = 100 MHz (For DTr 1(NPN) |
The UMD9N is a dual digital transistor from Yangzhou Yangjie, integrating an NPN and a PNP transistor with built-in bias resistors in a single package. This device is designed for use in switching and interface applications where space savings and component count reduction are critical. The NPN transistor (DTr1) has a 10kΩ input resistor, while the PNP transistor (DTr2) has a 47kΩ input resistor. Typical transition frequency is 250MHz for both, allowing high-speed switching. The maximum collector current is -100mA for the NPN and 100mA for the PNP. Power dissipation depends on the package variant: 120mW total for EMD9/UMD9N packages, and 200mW or 300mW total for the IMD9A package. The device is suitable for low-power signal processing, logic level shifting, and driver circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-100mA (maximum, for DTr1 NPN).
100mA (maximum, for DTr2 PNP).
10kΩ typical.
47kΩ typical.
250MHz typical for both NPN and PNP under specified test conditions.
120mW total (for EMD9/UMD9N packages).