| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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24,000 pcs
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24000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The UMD2NTR from ROHM Semiconductor is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor. This device is designed for surface mount applications and comes in a compact UMT6 package.
Key electrical characteristics include a maximum operating voltage of 50V and a maximum current of 100mA. The power dissipation is rated at 150mW, with a typical DC current gain (hFE) of 56 at 5mA and 5V. Saturation voltage (Vce) is a maximum of 300mV at 500µA and 10mA. The integrated pre-bias resistor has a value of 22kΩ.
This transistor array operates at frequencies up to 250MHz. It is suitable for various general-purpose switching and amplification applications where a pre-biased configuration simplifies circuit design. The surface mount capability makes it ideal for space-constrained electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50V.
The maximum collector current is 100mA.
The UMD2NTR is available in a 6-TSSOP, SC-88, SOT-363 package, also known as UMT6.
The maximum power dissipation is 150mW.
The minimum DC current gain is 56 at 5mA collector current and 5V collector-emitter voltage.
The maximum Vce saturation voltage is 300mV at 500µA base current and 10mA collector current.
The integrated pre-bias resistor is 22kΩ.