| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,160 pcs
|
3160 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Resistor | |
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| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The UMC3NTR from ROHM Semiconductor is a dual digital transistor featuring both NPN and PNP silicon transistors in a single UMT5 package. This configuration is ideal for power switch circuits, offering reduced mounting cost and area.
Key electrical specifications include a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device offers a DC current gain (hFE) of 30 minimum at 5mA collector current and 5V Vce. Saturation voltage (Vce Sat) is a maximum of 300mV at 500µA base current and 10mA collector current. The transistor array has a transition frequency of 250MHz and includes a built-in 10kΩ base resistor.
Designed for surface mounting, the UMC3NTR is housed in a compact UMT5 package (also known as 5-TSSOP, SC-70-5, SOT-353). Its structure is epitaxial planar type, providing reliable performance for power management applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50V.
The maximum collector current is 100mA.
The package is 5-TSSOP, SC-70-5, SOT-353, with a supplier device package of UMT5.
The maximum power dissipation is 150mW.
The transition frequency is 250MHz.
The integrated base resistor is 10kΩ.