| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,900 pcs
|
2900 pcs | On Request | 1 | On Request | On Request | 2001 | On Request | On Request |
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The UMA6NT1 from On Semiconductor is a dual PNP silicon transistor featuring a monolithic bias resistor network. This design integrates two bias resistor transistors (BRTs) into a single package, simplifying circuit design and reducing component count and board space. Each transistor within the UMA6NT1 has a series base resistor and a base-emitter resistor.
Key electrical specifications include a collector-emitter voltage (VCEO) of 50V and a collector current (IC) of 100mA. The integrated resistor value (R2) is 47kΩ. The device is housed in a compact SC-88A/SOT-353 surface mount package, making it ideal for space-constrained applications.
This component is suitable for low power applications where a simplified bias network is required. The integrated resistors eliminate the need for external components, leading to a more compact and cost-effective solution.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the UMA6NT1 is 50 Vdc.
The maximum collector current (IC) for the UMA6NT1 is 100 mAdc.
The UMA6NT1 features an integrated resistor with a value of 47kΩ.
The UMA6NT1 is available in the SC-88A/SOT-353 package.
The operating and storage temperature range for the UMA6NT1 is -65 to +150 °C.
The UMA6NT1 is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) for the UMA6NT1 is 1.