| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
UM6K31NTN is a dual N-channel MOSFET from ROHM Semiconductor in a compact UMT6 surface-mount package. It is rated for a maximum drain-to-source voltage of 60V and a maximum continuous drain current of 250mA, with a maximum on-resistance of 2.4Ω at a gate-source voltage of 10V and drain current of 250mA. The device also features a logic-level gate with 2.5V drive capability, and a maximum gate threshold voltage of 2.3V at 1mA drain current.
The maximum input capacitance is 15pF at 25V drain-to-source voltage. Maximum power dissipation is 150mW, and the maximum operating junction temperature is 150°C. The UMT6 package is also referenced as 6-TSSOP, SC-88, or SOT-363, and is intended for surface-mount assembly.
With its low current and power ratings, the UM6K31NTN is well suited for low-power load switching, signal switching, and battery-operated portable equipment where logic-level gate drive is available.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 60V.
The maximum continuous drain current is 250mA.
The maximum on-resistance is 2.4Ω at 250mA drain current and 10V gate-source voltage.
The maximum gate threshold voltage is 2.3V at 1mA drain current.
The maximum power dissipation is 150mW.
The maximum operating junction temperature is 150°C.
The UM6K31NTN is available in a UMT6 surface-mount package, also referenced as 6-TSSOP, SC-88, or SOT-363.