| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,278 pcs
|
1278 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The UM6K1NTN from ROHM Semiconductor is a dual N-channel MOSFET designed for surface mount applications. This component features a maximum drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 100mA. The on-resistance (Rds On) is specified at a maximum of 8 Ohms at 10mA drain current and 4V gate-source voltage.
With a gate threshold voltage (Vgs(th)) of 1.5V maximum at 100µA, this MOSFET is suitable for logic-level gate applications. It has a power dissipation rating of 150mW and an operating temperature range up to 150°C.
The device is packaged in a SOT-363 (also known as SC-88 or UMT6) surface mount package, making it suitable for compact electronic designs. The configuration consists of two N-channel MOSFETs within a single package.
Key electrical characteristics include an input capacitance (Ciss) of 13pF at 5V drain-source voltage. The technology employed is MOSFET (Metal Oxide).
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the UM6K1NTN is 30V.
The UM6K1NTN MOSFET has a continuous drain current of 100mA.
The Rds On is a maximum of 8 Ohms when the drain current is 10mA and the gate-source voltage is 4V.
The UM6K1NTN can operate at temperatures up to 150°C (TJ).
The UM6K1NTN MOSFET is supplied in a SOT-363 package.
The UM6K1NTN is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) for the UM6K1NTN is 1.