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UJ4C075060L8S-D The UJ4C075060L8S-D is a 750V Silicon Carbide (SiC) Field-Effect Transistor (FET) from On Semiconductor. It features a low drain-source on-resistance and is supplied in a SOIC package.
Mfr Part #:

UJ4C075060L8S-D

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The UJ4C075060L8S-D is a 750V Silicon Carbide (SiC) Field-Effect Transistor (FET) from On Semiconductor. It features a low drain-source on-resistance and is supplied in a SOIC package.
✓ Total Stock: 12,000 pcs
$ Price Range: $2.81

UJ4C075060L8S-D Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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12,000 pcs
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UJ4C075060L8S-D Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Lead Spacing
Lead Style
SVHC Present
Tape & Reel
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UJ4C075060L8S-D Description

Short technical summary and product information.

The UJ4C075060L8S-D is a high-performance Silicon Carbide (SiC) FET manufactured by On Semiconductor. This device operates at a drain-source voltage of up to 750V and offers a typical drain-source on-resistance of 7.4mΩ at 18V VGS. With a maximum power dissipation of 155W, it is designed for demanding applications.

 

The FET is housed in a standard SOIC package, making it suitable for surface-mount designs. It operates within a temperature range of -55°C to 175°C. The device is based on a cascode circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to achieve a normally-off SiC FET device.

 

This SiC FET is a robust component for power electronics applications requiring high efficiency and reliability. Its specifications make it suitable for various industrial and automotive power management systems.

UJ4C075060L8S-D Quick Information

Product Type: SiC FET
Series: UJ4C
Canonical Name: UJ4C075060L8S-D SiC FET
Subcategory: SiC FET

UJ4C075060L8S-D Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

UJ4C075060L8S-D Estimated Pricing

Qty Low High
1+ $2.81 $2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

UJ4C075060L8S-D Features

  • 750V drain-source voltage rating.
  • Low 7.4mOhm typical on-resistance.
  • 155W maximum power dissipation.
  • Operates from -55C to 175C.
  • SOIC package for surface mounting.

UJ4C075060L8S-D Applications

  • Suitable for high-voltage power applications.
  • Ideal for efficient power conversion circuits.
  • Used in industrial power supplies.
  • Applicable in automotive electronics.

UJ4C075060L8S-D FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the UJ4C075060L8S-D?

The maximum drain-source voltage is 750V.

What is the typical drain-source on-resistance?

The typical drain-source on-resistance is 7.4mΩ at 18V VGS.

What is the maximum power dissipation?

The maximum power dissipation is 155W.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C.

What package type is the UJ4C075060L8S-D supplied in?

The UJ4C075060L8S-D is supplied in a SOIC package.

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