| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,400 pcs
|
11400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Channel Type | |
| Gate Charge | |
| Mounting Type | |
| Polarization | |
| Power Dissipation | |
| SVHC Present | |
| Technology | |
| Transistor Type |
The On Semiconductor UJ4C075023K3S is a high-performance N-JFET/N-MOSFET transistor utilizing Silicon Carbide (SiC) technology. This unipolar, cascode transistor is designed for demanding applications requiring high voltage and current handling capabilities.
Key electrical specifications include a maximum drain-source voltage of 750V, a continuous drain current of 49A, and a pulsed drain current of 196A. The transistor exhibits a low on-state resistance of 50mΩ and a power dissipation rating of 306W. The gate-source voltage range is specified as -25V to 25V, with a gate charge of 37.8nC.
This component is housed in a TO247-3 package and is designed for Through-Hole (THT) mounting. The SiC technology enables superior performance characteristics compared to traditional silicon-based devices, making it suitable for power electronics applications where efficiency and reliability are critical.
Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level (MSL) 1, and REACH unaffected status. However, these compliance details are based on precomputed data and should be verified.
| Qty | Low | High |
|---|---|---|
| 1+ | $19.69 | $19.69 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 750V.
The continuous drain current is 49A.
The transistor uses Silicon Carbide (SiC) technology.
The on-state resistance is 50mΩ.
It is an N-JFET / N-MOSFET cascode transistor.
It is supplied in a TO247-3 package.
It is mounted using the THT (Through-Hole) method.