| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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600 pcs
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600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The Qorvo UJ3D06520KSD is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. It features a maximum reverse voltage of 650V and an average rectified current of 10A. The forward voltage is typically 1.7V at 10A.
This diode utilizes SiC Schottky technology, offering advantages such as high efficiency and reliability. It has a typical capacitance of 654pF at 1V and 1MHz. The operating junction temperature ranges from -55°C to 175°C.
The UJ3D06520KSD is packaged in a TO-247-3 through-hole configuration, making it suitable for various power electronics designs. Its robust construction and electrical characteristics make it a reliable component for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage (Vr) for the UJ3D06520KSD diode is 650V.
The typical forward voltage (Vf) for the UJ3D06520KSD diode at 10A is 1.7V.
The average rectified current (Io) for the UJ3D06520KSD diode is 10A.
The operating junction temperature for the UJ3D06520KSD diode ranges from -55°C to 175°C.
The UJ3D06520KSD diode uses SiC (Silicon Carbide) Schottky technology.
The UJ3D06520KSD diode is supplied in a TO-247-3 package and is designed for through-hole mounting.