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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The Qorvo UJ3D06516TS is a Silicon Carbide (SiC) Schottky diode, categorized under single diodes. This component is engineered for demanding applications requiring high efficiency and reliability.
Key electrical specifications include a maximum DC reverse voltage (Vr) of 650V and an average rectified current (Io) of 16A. The forward voltage (Vf) is a maximum of 1.7V at 16A, with a very fast reverse recovery time of 0 ns. The leakage current at 650V is 100 µA, and capacitance is 500 pF at 1V and 1MHz.
This diode operates within a junction temperature range of -55°C to 175°C. It utilizes SiC Schottky technology, offering superior performance characteristics compared to traditional silicon diodes.
The UJ3D06516TS comes in a TO-220-2 package, suitable for through-hole mounting. It is supplied in tube packaging.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum DC reverse voltage (Vr) for the UJ3D06516TS diode is 650V.
The Qorvo UJ3D06516TS has an average rectified current (Io) rating of 16A.
The maximum forward voltage (Vf) at 16A for the UJ3D06516TS diode is 1.7V.
The UJ3D06516TS operates within a junction temperature range of -55°C to 175°C.
The UJ3D06516TS diode uses Silicon Carbide (SiC) Schottky technology.
The UJ3D06516TS diode is supplied in a TO-220-2 package.