| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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890 pcs
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890 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The Qorvo UJ3D06510TS is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. It features a maximum reverse voltage of 650V and an average rectified current of 10A.
Key electrical characteristics include a typical forward voltage of 1.7V at 10A and a reverse leakage current of 60µA at 650V. The diode has a capacitance of 327pF at 1V and 1MHz. It operates within a junction temperature range of -55°C to 175°C.
This component utilizes SiC technology, offering advantages in terms of efficiency and thermal performance compared to traditional silicon diodes. The diode has a zero reverse recovery time, contributing to reduced switching losses.
The UJ3D06510TS is supplied in a TO-220-2 package and is designed for through-hole mounting. Its robust construction and SiC technology make it suitable for various power electronics applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.19 | $7.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The UJ3D06510TS diode has a maximum reverse voltage of 650V.
The average rectified current for the UJ3D06510TS diode is 10A.
The typical forward voltage at 10A for the UJ3D06510TS diode is 1.7V.
The UJ3D06510TS diode uses SiC (Silicon Carbide) Schottky technology.
The UJ3D06510TS diode operates within a junction temperature range of -55°C to 175°C.
The UJ3D06510TS diode is supplied in a TO-220-2 package.